| 摘要 |
<p>PURPOSE:To provide a reliable semiconductor device in which an aluminum wiring is not dissolved by making narrower an opening in an uppermost layer protective film than that in a lower layer protective film, and covering the end surface of the lower layer protective film. CONSTITUTION:A double-layer structure protective film comprises a silicon oxide film 3 and a silicon nitride film 4 both having a predetermined thickness, and an opening in the silicon nitride film 4 is made narrower and the end surface of the silicon oxide film 3 is completely covered. With such construction, water including impurities and ions, etc., is prevented by the silicon nitride film 4 and does not reach the silicon oxide film 3, so that dissolution of impurities such as phosphorus is eliminated and dissolution of an aluminum wiring 2 due to electrolysis of water including said impurities is also eliminated. Hereby, since dissolution of a wire bonding part of a metal wiring is eliminated, a market failure rate is reduced to assure a high reliability semiconductor device.</p> |
