| 摘要 |
PURPOSE:To reduce the increase of an area for a spare row decoder selecting circuit by sharing a signal to activate a redundant circuit in respective blocks, for which a memory cell is divided, by the whole or one part of the blocks in the memory cell. CONSTITUTION:A semiconductor storage device is equipped with the plural memory cells, which are arranged in plural rows and plural columns, and the signals of address inputs A0-A7 are provided. Then, operation, which is divided into 1/2, is executed by memory cell arrays 1a and 1b. The memory cell arrays 1a and 1b are respectively equipped with spare rows 2a and 2b as the redundant circuits. A spair row decoder selecting signal generating circuit 18 is shared by the memory cell arrays 1a and 1b. Then, a sub decode signal is made inactive and spare row decoders 5a and 5b are activated. Thus, the increase of the area for the spare row decoder selecting circuit can be reduced. |
