Localized-current semiconductor laser.

摘要

The invention relates to semiconductor lasers in which the current is to be localised preferably in the emissive strip (1).
<??>In a laser comprising at least one emissive strip (1), a confinement layer (2) and a current-injection contact (11, 12), the latter is localised on the strip (1) by means of an overdoped well (5) which crosses the confinement layer (2) with doping gradient: it is doped to 10<1><8>at.cm<-><3> close (21) to the strip (1) and to 2.10<1><7>at.cm<-><3> close (22) to the injection contact.
<??>Application to telecommunications and data processing by optical fibres.
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