发明名称 NEGATIVE TYPE PHOTORESIST AND USE THEREOF
摘要 PURPOSE: To impart durability against plasma containing oxygen by preparing a resist from a polymer material obtd. by the interaction between an organosilicon compd. and an epoxy novolac polymer, and a radiation-sensitive onium salt. CONSTITUTION: The resin contains a polymer material obtd. by the interaction between an organosilicon compd. and an epoxy novolac polymer, and a radiation-sensitive onium salt. This onium salt is incorporated by an amt. required to increase the photosensitivity of the compsn. for electron beams, X-rays, ion beams and far UV rays. The polymer material is obtd. by the interaction between an organosilicon compd. and an epoxy novolac. Thereby, the obtd. resist is durable against reactive ion etching in oxygen plasma and an image of high resolution can be obtd.
申请公布号 JPH02294651(A) 申请公布日期 1990.12.05
申请号 JP19900064507 申请日期 1990.03.16
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 MAIKURU HATSUAKISU;JIEIN MAAGARETSUTO SHIYOO;KEBIN JIEI SUCHIYUAATO
分类号 G03F7/038;C08G59/00;C08G59/14;C08G59/18;G03F7/004;G03F7/029;G03F7/075;H01L21/027;H01L21/30 主分类号 G03F7/038
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