MONOLITHIC HETEROEPITAXIAL MICROWAVE TUNNEL DIE

摘要

A monolithic heteroepitaxial microwave tunnel diode with a vertical tunnel junction is manufactured from an insulating substrate on which a layer of p-type semiconductor material has been grown. A layer of dielectric thin film is placed over the p-type semiconductor layer and where an ohmic contact is desired an opening is formed in the dielectric thin film. A circuit metal is then alloyed to the p-type semiconductor material. A similar opening is formed where a tunnel junction is desired and a second metal is alloyed to the p-type semiconductor material. An n-type semiconductor region is formed during the second alloying.