| 摘要 |
<p>A light-emitting diode prepared by a new process is disclosed. The light-emitting diode has compound semiconductor epitaxial layers composed of GaAs1-xPx (0 </= x </= 1) on p compound semiconductor GaP single-crystal substrate, and has a light-emitting layer provided with a p-n junction formed in the surface layer region of the epitaxial layers. The diode is characterized in that it has a total maximum thickness of the epitaxial layers 20 to 40 mu m. The process for preparing the diode is characterized in that the process can determine a required maximum thickness of the compound semiconductor epitaxial layers by presuming light output power from the thickness of the epitaxial layers based on the following equation: L = exp(Ax0 + B ) + C where A, B and C are definite values obtained from experiments conducted, L is light output power and x0 is the total thickness of the epitaxial layers.</p> |
