| 摘要 |
<p>1,244,463. Polishing silicon surfaces. INTERNATIONAL BUSINESS MACHINES CORP. 12 Feb., 1970 [28 Feb., 1969], No. 6740/70. Addition to 1,168,536. Heading C1A. A planar silicon surface is polished by continuously wetting the surface with a displacement plating solution of pH less than 7 and containing a mercury cation and a fluoride anion thus causing displacement plating of the mercury on to the surface and continuously wiping the surface with a firm surface, thus removing plated mercury from the high points of the silicon surface. In the example napped cloth was plated a mercury nitrate/ammonium fluoride solution at pH 6À5. After polishing excess mercury was removed with hot concentrated nitric acid. The polishing process and apparatus is that described in parent Specification.</p> |
