Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallen,申请号CH19690018698-传众专利搜索

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发明名称	Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallen
摘要
申请公布号	CH522290(A)	申请公布日期	1972.06.15
申请号	CH19690018698	申请日期	1969.12.16
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	DR. SIRTL,ERHARD,DIPL.-CHEM.
分类号	A01D19/06;H01L21/322;H01L23/29;(IPC1-7):H01L7/00	主分类号	A01D19/06
代理机构		代理人
主权项
地址

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