发明名称 |
INSULATED GATE BIPOLAR TRANSISTOR POWER MODULE |
摘要 |
<p>A power module contains IGBT die along with integrated circuit driver chips and opto isolators or isolation transformers within the same module housing. Output terminals are provided which can be interfaced directly to control logic or microprocessors for operating the module. The IGBTs may have current-sensing electrodes to simplify current measurement and control functions.</p> |
申请公布号 |
GB9023303(D0) |
申请公布日期 |
1990.12.05 |
申请号 |
GB19900023303 |
申请日期 |
1990.10.25 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
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分类号 |
H01L25/07;H01L25/16;H01L25/18;H02M7/00;H02M7/538;H03K17/082;H03K17/12 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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