| 摘要 |
PURPOSE:To improve the degree of integration of a PLD (programmable device) by an extent equal to transistors TR omitted by constituting a programmable logical device with a 3-element type dynamic RAM using a small number of TRs forming a RAM in comparison with a static RAM. CONSTITUTION:A 3-element type dynamic RAM cell 1 contains three TRs of a writing MOS type TR T3, a capacitor C formed at the source side to store the electric charge, a charge detecting MOS type TR T2 connected to the capacitor C, and a reading MOS type TR T1 which selects the TR T2. Thus a 3-element type dynamic RAM consists of three TRs and therefore the TRs can be decreased by 2 or 3 pieces per memory cell in comparison with a static RAM. As a result, the degree of integration of a PLD is extremely improved. |
