| 摘要 |
A circuit for detecting semiconductor temperature is described, which is made up in such a way that a current supply means 10 and resistance means with polycrystalline silicon 20 linked in series are provided between a first power supply line 11 and a second power supply line 12, and that the terminal voltages of the said resistance means with polycrystalline silicon 20 are extracted in the form of temperature detection signals. The device of the present invention makes it possible to detect the temperature of a semiconductor by means of a polycrystalline silicon and consequently the latter is completely appropriate for installation in very high density semiconductor devices. Moreover, the device requires low power consumption and can be designed in a manner having no relationship with the fabrication method and the temperature variations. Moreover, the semiconductor temperature can be detected by means of a digital type method and consequently the detection signals can be used directly without being subjected to any conversion or processing. Consequently, the designer has greater freedom in the design of very high density semiconductor devices. <IMAGE>
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