SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To acquire a semiconductor of high hygro-resistance, by covering a junction pad metal or a metal wiring including the pad with its metal oxide, and connecting a lead breaking through an oxide layer. CONSTITUTION:An Al wiring layer 206 extended to an SiO2 film 202 on an Si substrate 201 and connected to an impurity layer 203 is treated with oxygen plasma and covered with an Al2O3 film 207. An Si3N4 film 208 is piled up by a plasma reaction of SiH4 and NH3. A pad 209 is bored, and a lead 210 is connected to the pad, breaking through the Al2O3 film. This constitution brings a device excelling in hygro-resistance, because there exists Al2O3 on Al of the pad 209.