| 摘要 |
PURPOSE:To easily reshape a photoresist pattern even when a prescribed pattern has not been obtained and to reduce the number of processes by a method wherein, after the photoresist pattern has been formed on a substrate, a desired position of this pattern is irradiated with an electron beam. CONSTITUTION:Photoresist patterns 11 which have been formed on a substrate 10 are formed to be semicylindrical. When the semicylindrical photoresist patterns 11 are used, electrodes 13 on the substrate 10 are connected to electrodes 13 on the photoresist patterns 11; all the photoresist patterns 11 are covered with the electrodes 13. It is impossible to leave the electrodes 13 selectively even after a lift-off process has been executed. Then, when the photoresist patterns 11 are irradiated with electron beams 21, the resists are deformed by an accelerating energy of the electron beams; it is possible to obtain photoresist patterns 12 of prescribed inverted taper shapes. Thereby, the electrodes 13 on the substrate 10 can be separated from the electrodes 13 on the photoresist patterns 11. Accordingly, it is possible to form the electrodes 13 selectively by the lift-off process. |
