SEMICONDUCTOR WAFER, FORMING METHOD OF THE SAME, TRANSDUCER AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: To obtain a highly reliable silicon diaphragm by forming a diaphragm having desired thickness integrally with the peripheral structure. CONSTITUTION: A silicon diaphragm 16 having desired thickness is formed integrally with the peripheral structure 20 and a gap or a setback part of desired dimensions is formed independently by micromachining between the diaphragm 16 and a capacitor plate 14. Since the capacitor gap and the thickness of the diaphragm can be controlled independently, the parameter can be selected individually so that the linearity of a converter device 10 is optimized. Furthermore, the diaphragm 16 can be formed uniformly as thin as severalμm by a unique etching process. Subsequently, the opposing faces 42, 44 of the structure 20 can be mirror finished through micromachining and coupled electrostatically with glass substrates 22, 24.