IMPROVEMENTS IN SEMICONDUCTOR DEVICES

摘要

1281043 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 19 Sept 1969 [7 Oct 1968 (2)] 46256/69 Heading H1K A n-type region formed in a p-type region of a Si body contains As diffused to a surface concentration greater than 1020 atoms/cm.3 and is provided with successive coatings of oxide and phospho-silicate glass. An npn transistor (Fig. 1) may be manufactured using conventional processes at all stages up to the emitter diffusion stage, which is carried out in accordance with the invention in a closed capsule at 1000‹ C. The transistor may be isolated laterally by ptype regions 14, 20 and vertically by an I-type layer produced by diffusion of Au into the device.