| 摘要 |
PURPOSE:To prevent a silicide from being stripped off from polysilicon and to obtain a semiconductor device whose reliability is enhanced by a method wherein a contact hole on a gate and/or a wiring part is formed so as to avoid a boundary part between a p-type impurity introduction region and an n-type impurity introduction region. CONSTITUTION:This semiconductor device is provided with a wiring part (gate) 11 which constitutes a so-called CMOS transistor formed by using a fine process technique. A contact hole 12 on this wiring part (gate) 11 is formed so as to avoid a boundary part 3 between a p-type impurity introduction region and an n-type impurity introduction region. Thereby, it is possible to prevent impurities of different kinds from being introduced into a silicide constituting an upper layer of the wiring part (gate) 11.
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