| 摘要 |
PURPOSE:To reduce interference noises due to the capacity coupling between bit lines, to prevent sense amplifiers from malfunctioning, and to improve the read speed of data by connecting memory cells which are connected to adjacent bit lines to mutually different word lines. CONSTITUTION:The semiconductor memory device has the differential sense amplifiers 1 - 3 which are arrayed in one direction, couples of bit lines B1-B1 and B2-B2 extending from the sense amplifiers 1 - 3 on both sides, word lines W1 and W2 extending crossing the bit lines, and memory cells M and M1 connected to those bit lines and word lines. In the semiconductor memory device, the memory cells which are connected to adjacent bit lines are connected to mutually different word lines. Consequently, the interference noises due to the capacity coupling between adjacent bit lines are reduced, the sensor amplifiers are prevented from malfunctioning, and the read speed of data can be improved. |
