| 摘要 |
PURPOSE: To reduce power consumption in a standstill state by configuring a ROM memory with a transistor(Tr) comprising a current channel and a control electrode, for controlling the conductance of a current channel, and connecting a word line to the control electrode. CONSTITUTION: A ROM cell 40 is formed of multiple columns and rows, with each row connected to one word line 42 and each column bit lines 44 and 46, respectively. At each memory cell a single Tr, similar to transistors Tr 48 and 50, is provided respectively, with a gate 52 of the Tr 48 connected to the word line 42, one end of the current channel of the Tr 48 connected to the bit line 44, and the other end 56 to a power source VSS. In addition, a gate 58 of the Tr 50 is connected to the word line 42, while one end 60 of the current channel of the Tr 50 connected to the bit line 46. Further, the other end 62 of current channel is connected to a power source VDD, a power source for the power source VSS supplied. Conductance control for the current channel is performed with all the current channels and the Trs containing control electrodes. |
