| 摘要 |
PURPOSE:To manufacture a semiconductor device provided with a capacitor excellent in charge storage capacitance by a method wherein a dielectrics high in dielectric constant is formed by removing an oxide film between the first electrode and a dielectric film and so forth. CONSTITUTION:An Si substrate 1 whereon an n type diffused layer is formed is inserted into the second furnace 20b of a device 19 using a reduced pressure CVD device 19. Next, the inside of the reaction furnace 20b is evacuated through an evacuation part 22b. Next, hydrogen fluoride vapor is led into the reaction furnace 20b from a gas leading-in pipe 23 connected to the furnace 20b. Then, a spontaneous oxide film formed on the surface of the Si substrate 1 is etched away. Later, the substrate 1 is shifted to the first reaction furnace 20a through a load/unload lock chamber 21. Then, a reaction gas (SiH2,Cl2, NH3) is led into the reaction furnace 20a through another leading-in pipe 24. Finally, a silicon nitride film 5 is deposited. Through these procedures, in the same device, the formation of the spontaneous oxide film or a rolled up oxide film can be prevented. |
