| 摘要 |
PURPOSE:To prevent the breakdown of the gate electrode and the gate insulating film of the titled transistor by a method wherein an impurity ion is implanted on a semiconductor substrate using a gate electrode, which is provided through the intermediary of a gate insulating film, as a mask and when source and drain regions are formed in a substrate, a conductive film is coated on the whole surface and the impurity ion is implanted through the conductive film. CONSTITUTION:A thick SiO2 film 2 to be used for isolation is formed on the circumferential part of a semiconductor substrate 1, and a thin gate insulating film 3 is coated on the substrate which is surrounded by the film 2. Then, a polycrystalline Si layer, which will be turned to a gate electrode, is deposited on the film 3, and a gate electrode 6 is formed by performing an etching on the Si layer using the photoresist film 5 as a mask. Then, with the film 5 left over, a source and drain region 7 is formed in the substrate 1 located on both sides of the electrode 6 by performing an ion implantation through a conductive iridium oxide film 8 which is coated on the whole surface. Through these procedures, no electric charge is accumulated on the electrode 6 and the film 5 and also no discharge phenomenon is generated, thereby enabling to prevent the breakdown of the electrode 6 and the film 3. |
