| 摘要 |
PURPOSE:To eliminate the generation of thermal stress against a guard ring joining section by covering a guard ring section with a material having less wettability against a brazing material so that the brazing material cannot be spread to the upper part of the guard ring section when a barrier metal layer is connected with a terminal conductor through an electrode metal layer with the brazing material. CONSTITUTION:An annular guard ring layer 3 is formed in the surface section of an n layer 2 and the surface of the outside section is covered with an oxide film 4. A barrier metal layer 5, the end section of which is brought into contact with the layer 3 is provided inside the film 4 and an electrode metal layer 6 is deposited on the entire surface of the layer 5. Then a header 7 is soldered to the central part of the layer 6 with solder 8, but the soldering of the header 7 is performed in such a way that the entire surface of the n layer 2 including the layer 6 is covered with a polyimide film 9 and the header 7 is brazed to the layer 6 through a window opened in the film 9. When the soldering is performed in such way, the thermal stress produced at the time of the soldering is not transferred to the joining section of the guard ring 3 and the reliability of this Shottky barrier semiconductor device thus formed is improved. |
