| 摘要 |
Apparatus comprising an indium bump (11) that may be etched in a low concentration of hydrochloric acid (typically 1%) to remove oxide buildup, and a pad generally comprising a three layer arrangement of gold (16) over nickel (15) over titanium (14). The indium bump (11) and the gold pad (20) are pressed together for a short period of time, typically on the order of ten seconds, and then the pressed components are allowed to alloy weld over an extended period of time. Alternatively, the bump and pad may be heated at approximately 100 degrees Celsius for a period of about one hour to accelerate the alloy process. The heating diffuses the gold from the pad into the indium bump, thus forming a true alloy weld between the two that has incredibly strong bonding strength. Such bonding materials and men are useful in bonding integrated circuit components, and the like. |
