| 摘要 |
PURPOSE:To increase electrode capacities and to enhance the anti-noise characteristic of a silicon integrated circuit device by a method wherein the diffusion region for electric power source and the diffusion region for the earth are provided being made to come in contact with the buried region in an IC element consisting of Si. CONSTITUTION:A protective film 16 for ion implantation is adhered on the surface of a p<-> type Si substrate 13, and a mask of Si3N4 film 15 having an opening corresponding to the thick oxide film 10 forming region is provided. Then p type impurity ions are implanted in the opening through the film 16, and a resist mask 17 for formation of the diffusion region to increase capacity of electrodes for an electric power source and for the earth is provided at the central part of the film 16. Then, n type impurity ions are implanted using the mask thereof, the heat treatment is performed to make the thick oxide film 10 to be generated in the opening, while n<+> type first and second buried regions 9, 11, are formed thereunder interposing the p<+> type region 14 between them. Then the n<+> type diffusion region 7 for electric power source and diffusion region 8 for the earth are provided being made to come in contact respectively with the regions 9, 11, and an electric power source wiring 5 and an earth wiring 6 are fixed respectively. |
