FELDEFFEKTTRANSISTOR MIT ISOLIERTEM GATE (IGFET),申请号DE19904011276-传众专利搜索

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发明名称	FELDEFFEKTTRANSISTOR MIT ISOLIERTEM GATE (IGFET)
摘要
申请公布号	DE4011276(A1)	申请公布日期	1990.11.29
申请号	DE19904011276	申请日期	1990.04.06
申请人	FUJI ELECTRIC CO., LTD., KAWASAKI, KANAGAWA, JP	发明人	UENO, KATUNORI, YOKOSUKA, KANAGAWA, JP
分类号	H01L21/225;H01L21/331;H01L21/336;H01L29/08;H01L29/423;H01L29/739;H01L29/78	主分类号	H01L21/225
代理机构		代理人
主权项
地址

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