| 摘要 |
PURPOSE:To facilitate an increase in the density of the surface of a MIS semiconductor device by a method wherein the source and drain, which have a pair of structures, of the device are not separated from each other by a gate electrode and are separated from each other by a dynamically reinforced gate electrode provided at a region where the source or the drain can be constituted. CONSTITUTION:A first photomask is used on a semiconductor substrate 1 or on a silicon nitride film 4 on the substrate, the film 4 is removed by a selective oxidizing method to bury a field insulator 2 in the substrate in a prescribed thickness and moreover, As is doped under the film 4 by an ion-implantation method and the vicinity of the interior of the surface is turned into an N-type to form a layer 20. Moreover, the film 4 is removed and a gate insulating film 11, which consists of an insulating film other than the film 4 and has a prescribed thickness, and a capacitor dielectric 5 are formed. Then, the dielectric film 5 is selectively removed by a photolithography technique in such a way that the edges on the peripheries of the sides of the dielectric film 5 are not subjected to side etching and the vertical side surfaces of the edges can be formed and a first region 3 is made to remain. A silicon oxide film 19 is formed on the region 3 and on the side surfaces of the region 3 in a prescribed thickness. |
