发明名称 |
Non-volatile semiconductor memory device. |
摘要 |
<p>A non-volatile semiconductor memory device having a plurality of non-volatile memory cells, each cell having a floating gate (6) and control gate (8) above a channel region (1a) sandwiched between a source region (2) and drain region (3) on the surface of a semiconductor substrate (1), and the channel region (1a) on the drain region (3) side facing the floating gate (6) via a thick insulating film (4).</p> |
申请公布号 |
EP0399527(A2) |
申请公布日期 |
1990.11.28 |
申请号 |
EP19900109894 |
申请日期 |
1990.05.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HORI, MASAYUKI, 32 E-TO TOSHIBA-DAINI-WAKAKUSA-RYO;TOZAWA, NORIYOSHI |
分类号 |
G11C17/00;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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