| 摘要 |
<p>PURPOSE:To improve followability of thermal variation in a semiconductor light emitting element by insulation-isolating a light emitting element region and a heat sensitive element region via a groove, and further forming to cover the sidewall of a groove with electrode metal on the heat sensitive element region. CONSTITUTION:In a semiconductor light emitting element, the same conductivity type buffer layer 2 as that of a semiconductor substrate 1 and an opposite conductivity type semiconductor layer 4 to that of the substrate 1 are sequentially laminated on the substrate made of GaAs or InP to form a multilayer structure. Then, a mask pattern having a stripelike opening is formed on the surface of the structure, the structure is etched to form a groove, one region divided by the groove is used as a light emitting element region 10, and the other is used as a heat sensitive element region 20. The depth of the groove exceeds a junction face 3 to reach a buffer layer. After an SiO2 film is formed 0.5mum as an insulating film 21 on the sidewall of the groove, electrodes 11, 22 are formed at the regions 10, 20. As a result, a semiconductor light emitting element whose followability of heat sensing is satisfactory and by which a high speed response is enabled is obtained.</p> |
