| 摘要 |
PURPOSE:To obtain a high-performance heterojunction bipolar transistor at a low cost by using diamond as an emitter region. CONSTITUTION:This device has an emitter region of diamond, a base region, and a collector region. That is, a substrate 100 is thermally oxidized and an oxide film 102 and the base region 101 are formed. The oxide film in the emitter region is removed by photoetching and the diamond emitter 103 is made thereon. Thereby a high-mobility, low-resistance, and high-heat-resistance emitter is obtained and a method to form films at a low cost can be used. |
