| 摘要 |
PURPOSE:To perform green semiconductor laser by laminating a BP layer and a GaxAl1-zN layer as a semiconductor layer for forming a double hetero junction, and employing a superlattice layer having a sphalerite type crystalline structure as the GaxAl1-xN layer. CONSTITUTION:In a semiconductor laser having a double hetero junction structure made of first conductivity type clad layers 12-14, an active layer 15 and a second conductivity type clad layer 16 on a substrate 11, the layers 12, 15, 16 are alternately laminated with BP layers and GazAl1-xN (0<=x<=1) layers, and a GaxAl1-xN layer is formed of a superlattice layer having a sphalerite type crystalline structure. Thus, a new compound semiconductor material having five elements having wide band gap and ZB type structure is used to obtain a practical green light semiconductor laser. |
