| 摘要 |
<p>A high voltage thin film transistor (32) comprising a charge transport layer (36), source and drain electrodes (38,40) laterally spaced from one another and each being in low electrical resistance contact with the charge transport layer, a gate electrode (48) spaced normally from the source and drain electrodes and extending laterally with one edge in the vicinity of the source electrode (38) and an opposite edge located between the source and drain electrodes, and a gate dielectric layer (46) separating the gate electrode (48) from the source and drain electrodes (38, 40) and the charge transport layer (36), in the normal direction, wherein the gate electrode and the source and drain electrodes are located on the same side of the charge transport layer.</p> |
