| 摘要 |
PURPOSE:To obtain a semiconductor laser element equipped with an internal current constriction layer and refractive index distribution by applying gas source MBE method for formation of an active layer part and an internal current constriction layer and next using the MOCVD method. CONSTITUTION:For a silicon substrate 1, the one which has a face orientation of (100) and is off-angled about 3 deg. in the orientation of (011) is used, the after forming a film for buffer of CaAs by doing gas source MBE, an n-type AlCaAs clad layer 4, a CaAs active layer 4, and a p-type AlCaAs clad layer 5 are grown selectively in order on a stripe 12 by MOCVD method, whereupon the stripe is formed of an active layer part whose cross section being surrounded by face (111)B CaAs is triangle. Next, when a mask 2 is removed and gas source MBE is done again, a CaAs thin layer for buffer whose crystal orientation is rotated 90 deg. is formed, and when a p-type AlCaAs clad layer 6 is grown in two stages by MOCVD, the formation of the growth layer becomes the face surrounded by the face (100), the face (111)A CaAs and face (111)B GaAs. As a result, and internal current constriction layer and refractive index distribution can be made. |
