Semiconductor device having two conductor layers and production method thereof.

摘要

A semiconductor device includes a base layer (1, 5), a chip region (CA) formed on the base layer, a peripheral region (PA) which surrounds the chip region on the base layer, and a patterned stacked structure formed on the base layer in both the chip region and the peripheral region, where the patterned stacked structure includes a lower layer (2) which is formed on the base layer, an intermediate layer (4) which is formed on the lower layer and an upper layer (3) formed on the intermediate layer. The upper layer and the intermediate layer are aligned to one side surface of the lower layer in at least a part of the chip region, and the intermediate layer and the upper layer cover one side surface of the lower layer in at least a part of the peripheral region.