发明名称 Dual temperature plasma etch.
摘要 <p>A tapered profile is obtained in a plasma glow discharge by varying the temperature of the wafer during the etch. The etch is isotropic while the wafer is hot and is anisotropic when the wafer is cool. The temperature is varied by valves (23-26) which switch temperature controlled fluids through the electrode (13) upon which the wafer (15) rests. By-pass conduits (41, 42) maintain the temperature of the plumbing by enabling continuous fluid flow so that the temperature of the electrode, and of the plumbing connecting it to the valves, stabilizes more rapidly.</p>
申请公布号 EP0399676(A1) 申请公布日期 1990.11.28
申请号 EP19900304724 申请日期 1990.05.01
申请人 TEGAL CORPORATION 发明人 LACHENBRUCH, ROGER BENNETT;GIFFEN, LESLIE
分类号 H01L21/00;H01L21/311 主分类号 H01L21/00
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