| 摘要 |
PHF 85 576 -17- 17-9-1986 Crucible for epitaxy from the liquid phase of semiconductor layers. The invention relates to a crucible for the growth of epitaxial layers of chemical compounds formed from several chemical elements by means of the method of epitaxy from the liquid phase comprising an elongate support (72), on which a movable part (73) slides longitudinally, the support comprising at least one recess for accommodating a substrate (76) on which is to be deposited at least one epitaxial layer, the movable part comprising at least one cavity (77) receiving a mother source (79) formed from initial epitaxy materials, the cavity having on the surface adjoining the support a lower opening whose dimensions correspond to the dimensions of the substrate (76) present therein. It is characterized in that the movable part (73) has throughout its length a longitudinal groove (81) on the surface which slides longitudinally on the support, this groove having a depth slightly exceeding the irregularities of the substrate and sufficiently small in order that the mother source cannot pass by means of a capillary effect and a width smaller than the dimensions of the substrate in order that the latter cannot penetrate into it, and in that the recess of the support accommodates an elevator (75) on which the substrate is placed, which holds the latter positioned on the lateral edges (82) of the groove (81), the elevator (75) being held in place by means of a small force developed by a pressure system, more particularly an asymmetrical lever (90) movable about an axis or a spring (85) of quartz. The invention is used in the growth of epitaxial semiconductor layers of semiconductor compounds, especially of Hg1-xCdxTe. Application: growths of epitaxial layers. Reference: Fig. 1. |
