| 摘要 |
Resonant tunneling semiconductor devices are disclosed useful for transport functions such as switching or amplification, and also for electro-optical conversions. In the structure of these devices, a central potential well is formed of an opposite conductivity type of semiconductor material to two semiconductor layers outside resonant tunneling barriers on each side of the central potential well, such that electrons in the well can tunnel to and from the outside semiconductor layers. The central potential well serves as the base of a three terminal device in transport applications, and as the light responsive portion for electro-optical applications. In one disclosed embodiment, the device is constructed in five layers of the most commonly used gallium-aliminum-arsenide compounds, an n GaAlAs, undoped GaAlAs, p GaAlAs, undoped GaAlAs, and n GaAlAs.
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