发明名称 Method of fabricating a semiconductor device.
摘要 <p>A method of fabricating a semiconductor device comprises steps of accommodating a substrate (4) on which the semiconductor device is to be fabricated in a container (1) of an electrically insulating material, forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground, and removing the film of the volatile organic solvent by evaporating the solvent.</p>
申请公布号 EP0398806(A2) 申请公布日期 1990.11.22
申请号 EP19900401309 申请日期 1990.05.16
申请人 FUJITSU LIMITED;FUJITSU VLSI LIMITED 发明人 UNO, MASAAKI;KOBAYASHI, MASANORI;NAKASHIMA, KAZUSHI
分类号 H01L21/02;H01L21/673 主分类号 H01L21/02
代理机构 代理人
主权项
地址