| 摘要 |
<p>PURPOSE:To improve the inverting speed of an output from a sense amplifier and to obtain the high speed in reading by improving the amplification factor of a current in a sense amplifier circuit and reducing the amplitude of the output from the sense amplifier. CONSTITUTION:A sense amplifier circuit 110 is composed of a first inverting amplifier 111 which defines a digit line 101 as an input, first and third P-channel field effect transistors Q3 and second, fourth, fifth and sixth N-channel type field effect transistors Q2, Q4, Q5 and Q6. The amplification factor of the current is made high in the sense amplifier circuit 110 and the amplitude of an output voltage from the sense amplifier is reduced. Thus, the inverting speed of the output from the sense amplifier is improved and reading operation can be executed at high speed.</p> |
