METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE BY PLATING AND APPARATUS THEREFOR

摘要

A plating solution is stored in an annular plating solution storage (1). A plating solution tank (3) having an open upper portion is arranged in a hollow portion of the storage (1). A mesh-like anode electrode (4) is arranged on the bottom portion of the plating tank (3). Hold members (6) are attached to an upper side wall of the plating tank (3). One of the hold members (6) is in contact with a portion to be plated of a semiconductor member and serves as a cathode electrode. The anode and cathode electrodes (4 and 6) are connected to a DC power source (15). The plating solution in the plating solution tank (3) is brought into contact with the portion to be plated and is isolated therefrom by an driving pump (9) intermittently driven at predetermined intervals using an intermittent drive unit (13). The power source (15) is kept in the ON state while the plating solution is in contact with the portion to be plated, thereby forming a plated layer on the portion to be plated.