| 摘要 |
PURPOSE:To avoid the asymmetry of the film thickness of photoresist by minimizing the step in targets thereby enhancing the alignment precision by a method wherein an insulating film comprising target parts formed by etching a part of the insulating film using the first etching process only out of two phase etching processes. CONSTITUTION:A part of an insulating film 13 is removed by the first isotropical or anisotropical etching process 17 using the patterns of the first photoresist 14 for etching away a region 15 to make a viahole 21 or a hole 21 on a contact hole and another region 16 to form a target part 18 for alignment. Next, only the target part 16 is covered with the second photoresist 19 to make the said viahole 21 or the contact hole 21 by the second anisotropical etching process 20 and then the said first and second photoresists 14, 19 are removed. Later, the whole surface is coated with an inner wiring layer 22 whose surface is further coated with the third photoresist 23 and when the said target part 18 is patterned, the position of the said target part 18 is detected to make an alignment. |
