THIN-FILM CAPACITOR AND METHOD OF MANUFACTURING A HYBRID MICROWAVE INTEGRATED CIRCUIT

摘要

A thin-film capacitor which has excellent withstand voltage characteristic, dielectric loss characteristic and production yield can be obtained by forming its dielectric film with a 3-layered structure comprising a first silicon oxide film formed on a polycrystalline sintered body substrate by a chemical vapor-phase deposition method, a second silicon oxide film formed by coating on the first silicon oxide film a solution state silicon oxide precursor followed by denaturing by heat treatment, and a third silicon oxide film formed on the second silicon oxide film by a chemical vapor-phase deposition method. A hybrid microwave integrated circuit is manufactured in which the above-mentioned thin-film capacitors are used as input/output coupling and DC blocking capacitors, bypass capacitors and impedance matching capacitors.