| 摘要 |
<p>PURPOSE:To decrease the area of a TFT occupying in one picture element while suppressing the fluctuation of the capacity between a source and gate within the plane of a display region to a lower level by devising the shapes of a source electrode and drain electrode. CONSTITUTION:The thin-film transistor (TFT) 20 is constituted of the gate electrode 22 integral with a line selection line 21, the drain electrode 24 integral with a row selection line 23, the source electrode 26 connected to a display electrode 25, and a semiconductor layer 27. The drain electrode 24 is provided on both sides of the source electrode 26 in the direction perpendicular to a longitudinal direction 28 of the line selection line 21. The drain electrode 24 is made into a shape having one recessed part 29, for example, a U shape. The source electrode 26 has a shape inserted into the recessed part 29. The fluctuation in the gate-source capacity occurring in the alignment error in the longitudinal direction 28 is decreased in this way and the effective utilization of the outer peripheral part of the source electrode 26 in forming a channel part is possible. The size of the TFT 20 is thus reduced.</p> |
