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发明名称
INTERNAL MATCHING CIRCUIT SUBSTRATE FOR SEMICONDUCTOR DEVICE
摘要
申请公布号
JPH02284502(A)
申请公布日期
1990.11.21
申请号
JP19890105146
申请日期
1989.04.25
申请人
NEC CORP
发明人
FUKAZAWA TOMOYOSHI
分类号
H01P5/02;H01P5/08
主分类号
H01P5/02
代理机构
代理人
主权项
地址
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