发明名称 |
MULTILAYER METALLIZATION METHOD FOR INTEGRATED CIRCUITS |
摘要 |
Metal contacts and interconnections for semiconductor integrated circuits are fabricated through the deposition of a sandwich structure of metal. The bottom layer of a refractory metal prevents aluminum spiking into silicon; the top layer of refractory metal or alloy serves to reduce hillocking of the middle layer of conductive material. The upper layer of refractory metal at the location of the contact pads is etched off to improve bonding during packaging. |
申请公布号 |
GB2206234(B) |
申请公布日期 |
1990.11.21 |
申请号 |
GB19880009912 |
申请日期 |
1988.04.27 |
申请人 |
* STANDARD MICROSYSTEMS CORPORATION |
发明人 |
NATASHA * US;BONGGI * KIM;JOHN E * BERG |
分类号 |
H01L23/52;H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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