Temperature controlled chuck for elevated temperature etch processing

摘要

A parallel plate plasma type etching apparatus is provided with a temperature control chuck 44 so that elevated substrate temperatures are controlled. With an elevated substrate temperature, the reaction rate is increased. With positive temperature control, the likelihood of damage to the semiconductor devices is significantly reduced. The chuck is provided with a large number of equally spaced electrical heaters 72 and control of the heaters is by a temperature sensor 74.