PATTERN FORMING METHOD OF III-V COMPOUND SEMICONDUCTOR,申请号JP19890105316-传众专利搜索

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发明名称	PATTERN FORMING METHOD OF III-V COMPOUND SEMICONDUCTOR
摘要
申请公布号	JPH02283020(A)	申请公布日期	1990.11.20
申请号	JP19890105316	申请日期	1989.04.24
申请人	NEC CORP	发明人	FURUHATA NAOKI;MIYAMOTO HIRONOBU
分类号	H01L21/302;H01L21/306	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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