发明名称 CONSTRUCTING METHOD OF MASK FOR X-RAY EXPOSURE
摘要 PURPOSE:To obtain a mask for X-ray exposure having a high positional precision, by using an X-ray transmitting thin film having a specified stress-film thickness product which enables prevention of deformation of a mask substrate. CONSTITUTION:An X-ray transmitting thin film 7 having the value of a stress- film thickness product given by formula I when the film thickness of the X-ray transmitting thin film 7 is denoted by tm, the Young's modulus by Em, a stress so defined that a positive sign is given when the direction of the stress of the X-ray transmitting thin film 7 is directed to the center of an X-ray mask substrate 6, by deltam, the diameter of the mask substrate 6 whereon the X-ray transmitting thin film 7 is formed, by D, the Young's mudulus thereof by Es, the Poisson ratio thereof by nus, the diameter of an X-ray transmitting window formed on the mask substrate 6 for transmitting X-rays by (d), and the degree of interlayer superposition allowance of an integrated circuit formed by using a plurality of X-ray masks, by p, is employed. Thereby the deformation of an Si substrate due to the stress of the X-ray transmitting thin film can be prevented and a mask for X-ray exposure satisfying a demanded precision in superposition can be obtained.
申请公布号 JPH02281726(A) 申请公布日期 1990.11.19
申请号 JP19890104342 申请日期 1989.04.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 OKI SHIGEHISA;ODA MASATOSHI;OZAWA AKIRA;OKUBO TAKASHI
分类号 G03F1/22;H01L21/027 主分类号 G03F1/22
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