| 摘要 |
<p>PURPOSE:To enable a viahole to match to a wiring in characteristic impedance and to lessen it in its floating capacitance by providing a dielectric low in dielectric constant between capacitor layers of high dielectric constant by a method wherein a conductor penetrating through the capacitor layer of the viahole is surrounded with a dielectric whose dielectric constant is lower than that of the capacitor layer. CONSTITUTION:A wiring layer dielectric 14 is formed on both the sides of a capacity electrode conductor 12 by coating polyimide of a dielectric constant of 5 as thick as 0.8mm through a spin coater, which is filled into a guide hole 13 of e viahole and cured at a temperature of 200 deg.C for 2 hours. Moreover, a copper film 10mum in thickness is formed through an electroplating and an electroless plating, which is etched to be formed into wiring conductors 15a and 15b. A viahole 16 is bored with a drill of ultra-hard alloy with a diameter of 0.4mum, and a conductor 17 of copper is formed on the inner wall of the viahole 16 through a viahole plating method.</p> |
