| 摘要 |
PURPOSE:To avoid contact of a metal wiring with water and thereby to prevent corrosion of the metal wiring by having a first opening part made in a prescribed area of a third insulating film and reaching a second insulating film, and a second opening part reaching the metal wiring from the bottom of the first opening part. CONSTITUTION:On an Al wiring 5 and a first insulating film 2 formed on a silicon semiconductor substrate 1, a second insulating film 3 and a third insulating film 4 are connected sequentially, and the third insulating film 4 in an area located inside by a prescribed dimension from the edge of an electrode part for ball-bonding in an area just above the Al wiring 5 is removed to provide an opening part 4a by an etching method, and thereby the second insulating film 3 is exposed. Subsequently, the central part of the second insulating film 3 exposed is removed by etching to provide an opening part 3a. In this way, an electrode for ball-bonding is formed. By this method, exposure of the metal wiring can be prevented and corrosion of the metal wiring due to water infiltrating through an IC package is held down. |
