| 摘要 |
PURPOSE:To establish a memory such as a static random access memory (SRAM) by employing a fine MISFET without lowering power supply voltage. CONSTITUTION:A low concentration impurity region 4 is provided in a drain side high concentration impurity layer 3 of a single drain structure MISFET, and an aluminum wiring 6 and a gate electrode film 5. The structure is formed using a mask by ion implantation of an opposite conductivity impurity to those of a source and a drain, without using a particularly complicated process. Additionally, when a MIS FET is applied to light doped drain LDD, a low concentration impurity region 7 is formed only on the drain side likewise the single drain structure or the low concentration impurity region 7 is formed on both sides of the source and the drain. Further, voltage between the source and the drain is also dropped to achieve further high reliability. |
