| 摘要 |
PURPOSE:To form resist patterns with good accuracy by selectively providing light translucent films which attenuate light intensity in the patterns different form the patterns of the metallic light shielding films of the photomask. CONSTITUTION:The chromium patterns 2 as the metallic light shielding films of 200nm thickness and 1mum pattern size are provided on one main plane of a glass substrate 1 which allows the transmission of light 3 and org. thin films 11 as the light translucent films having 1mum thickness and 80% light transmittance are provided in the patterns different from the chromium film patterns 2. The intensity of the light transmitted through the photomask is partially attenuated in this way and the dimensional accuracy of the resist patterns formed on a wafer having large steps is improved. |
